Advances in Photovoltaics: Part 2 by Gerhard P. Willeke, Eicke R. Weber
By Gerhard P. Willeke, Eicke R. Weber
Semiconductors and Semimetals has individual itself in the course of the cautious number of famous authors, editors, and individuals. initially widely recognized because the ''Willardson and Beer'' sequence, it has succeeded in publishing a variety of landmark volumes and chapters. The sequence publishes well timed, hugely suitable volumes meant for long term impression and reflecting the really interdisciplinary nature of the sector. The volumes in Semiconductors and Semimetals were and should stay of serious curiosity to physicists, chemists, fabrics scientists, and equipment engineers in academia, clinical laboratories and sleek undefined. This quantity is the second of a suite of seven with regards to photovoltaics.
Written and edited through across the world well known experts
Relevant to a large readership: physicists, chemists, fabrics scientists, and equipment engineers in academia, clinical laboratories and sleek
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Extra resources for Advances in Photovoltaics: Part 2
Therefore the reverse current in a Schottky barrier increases gradually with the reverse bias and becomes significant already at lower field strength than that of a p–n junction. The TC of this current is positive. It can be expected that the reverse current of a Schottky diode in a tip geometry of Fig. 21A also depends on geometrical parameters, like the inclination of the grain boundary and the remaining length of the precipitate needle in the bulk material. Moreover, it cannot be excluded that a-FeSi2 is not the only type of precipitates leading to type-2 breakdown sites.
4C), the reverse characteristic is linear, whereas at higher reverse bias the current increases more or less exponentially. As a rule, beyond a certain threshold voltage (typically about À13 V for a net doping concentration of 1016 cmÀ3) the steepness (slope) of the exponential characteristic further increases. Below this threshold voltage, the TC of the current is positive and beyond it becomes negative. These properties are nicely visible in Fig. , 2011b). Detailed quantitative local investigations of pre-breakdown in multicrystalline cells have been performed by many authors using reverse-bias DLIT imaging, reverse-bias electroluminescence (ReBEL) imaging, and EBIC imaging methods.
The TC of this current is positive. It can be expected that the reverse current of a Schottky diode in a tip geometry of Fig. 21A also depends on geometrical parameters, like the inclination of the grain boundary and the remaining length of the precipitate needle in the bulk material. Moreover, it cannot be excluded that a-FeSi2 is not the only type of precipitates leading to type-2 breakdown sites. It was shown by Schneemann et al. (2010) that indeed the onset voltages of different type-2 breakdown sites are different, 54 Otwin Breitenstein and that the current through each site is series resistance-limited.